CTM09N20 Datasheet and Replacement
Type Designator: CTM09N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220
CTM09N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTM09N20 Datasheet (PDF)
ctm09n20.pdf
CTM09N20 Crownpo Technology Power MOSFET Features General Description Dynamic dv/dt Rating This Power MOSFET is designed for low voltage, high Repetitive Avalanche Rated speed power switching applications such as switching Fast Switching regulators, converters, solenoid and relay drivers. Ease of Paralleling Simple Drive Requirements Pin Configuration Symbol... See More ⇒
Datasheet: CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , IRF1010E , CTM14N50 , CTM18N20 , CTM2N7002 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P .
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