CTM09N20 Datasheet. Specs and Replacement

Type Designator: CTM09N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220

CTM09N20 substitution

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CTM09N20 datasheet

 ..1. Size:140K  crownpo
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CTM09N20

CTM09N20 Crownpo Technology Power MOSFET Features General Description Dynamic dv/dt Rating This Power MOSFET is designed for low voltage, high Repetitive Avalanche Rated speed power switching applications such as switching Fast Switching regulators, converters, solenoid and relay drivers. Ease of Paralleling Simple Drive Requirements Pin Configuration Symbol... See More ⇒

Detailed specifications: CTLM7110-M832D, CTLM8110-M832D, CTM01N60, CTM02N60, CTM04N60, CTM06N60, CTM07N60, CTM08N50, IRF1010E, CTM14N50, CTM18N20, CTM2N7002, CTN2302, CTN2304, CTP2303, CWDM3011N, CWDM3011P

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