All MOSFET. CTM09N20 Datasheet

 

CTM09N20 Datasheet and Replacement


   Type Designator: CTM09N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220
 

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CTM09N20 Datasheet (PDF)

 ..1. Size:140K  crownpo
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CTM09N20

CTM09N20Crownpo TechnologyPower MOSFETFeatures General DescriptionDynamic dv/dt RatingThis Power MOSFET is designed for low voltage, highRepetitive Avalanche Ratedspeed power switching applications such as switchingFast Switchingregulators, converters, solenoid and relay drivers.Ease of ParallelingSimple Drive RequirementsPin Configuration Symbol

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