All MOSFET. CTM14N50 Datasheet

 

CTM14N50 Datasheet and Replacement


   Type Designator: CTM14N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 307 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-3P
 

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CTM14N50 Datasheet (PDF)

 ..1. Size:229K  crownpo
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CTM14N50

CTM14N50Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This high voltage MOSFET uses an advanced terminationRobust High Voltage Termination. scheme to provide enhanced voltage-blocking capabilityAvalanche Energy Specified.without degrading performance over time. In addition, thisSource-to-Drain Diode Recovery Time Comparableadvanced MOSFET is designed to wit

Datasheet: CTLM8110-M832D , CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , AON7506 , CTM18N20 , CTM2N7002 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N .

History: AP4543GEH-HF | TSM75N75CZ | AOE6932 | PDN2309S | NCE60N1K0I

Keywords - CTM14N50 MOSFET datasheet

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