All MOSFET. CTM14N50 Datasheet

 

CTM14N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CTM14N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 307 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-3P

 CTM14N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTM14N50 Datasheet (PDF)

 ..1. Size:229K  crownpo
 ctm14n50.pdf

CTM14N50 CTM14N50

CTM14N50Crownpo TechnologyPower MOSFETGeneral DescriptionFeatures.This high voltage MOSFET uses an advanced terminationRobust High Voltage Termination. scheme to provide enhanced voltage-blocking capabilityAvalanche Energy Specified.without degrading performance over time. In addition, thisSource-to-Drain Diode Recovery Time Comparableadvanced MOSFET is designed to wit

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM10N60C4 | AON3406 | VN89AB | STP10NA40FI | IPB80N04S4L-04 | TPC8080 | MGSF1N03L

 

 
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