CTM14N50 Datasheet. Specs and Replacement

Type Designator: CTM14N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 307 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-3P

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CTM14N50 datasheet

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CTM14N50

CTM14N50 Crownpo Technology Power MOSFET General Description Features . This high voltage MOSFET uses an advanced termination Robust High Voltage Termination . scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified . without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable advanced MOSFET is designed to wit... See More ⇒

Detailed specifications: CTLM8110-M832D, CTM01N60, CTM02N60, CTM04N60, CTM06N60, CTM07N60, CTM08N50, CTM09N20, IRFB3607, CTM18N20, CTM2N7002, CTN2302, CTN2304, CTP2303, CWDM3011N, CWDM3011P, CWDM305N

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