All MOSFET. CTM18N20 Datasheet

 

CTM18N20 Datasheet and Replacement


   Type Designator: CTM18N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220

 CTM18N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTM18N20 Datasheet (PDF)

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CTM18N20

CTM18N20 Crownpo Technology Power MOSFET General Description Features . This Power MOSFET is designed for low voltage, high Silicon Gate for Fast Switching Speeds . speed power switching applications such as switching Low R to Minimize On-Losses. Specified at Elevated DS(on) regulators, converters, solenoid and relay drivers. Temperature . Rugged SOA is Power Dissipation Limi... See More ⇒

Datasheet: CTM01N60 , CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , AON6380 , CTM2N7002 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND .

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