CTM18N20 Datasheet. Specs and Replacement

Type Designator: CTM18N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-220

CTM18N20 substitution

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CTM18N20 datasheet

 ..1. Size:171K  crownpo
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CTM18N20

CTM18N20 Crownpo Technology Power MOSFET General Description Features . This Power MOSFET is designed for low voltage, high Silicon Gate for Fast Switching Speeds . speed power switching applications such as switching Low R to Minimize On-Losses. Specified at Elevated DS(on) regulators, converters, solenoid and relay drivers. Temperature . Rugged SOA is Power Dissipation Limi... See More ⇒

Detailed specifications: CTM01N60, CTM02N60, CTM04N60, CTM06N60, CTM07N60, CTM08N50, CTM09N20, CTM14N50, AON6380, CTM2N7002, CTN2302, CTN2304, CTP2303, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND

Keywords - CTM18N20 MOSFET specs

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