CTM2N7002 Datasheet and Replacement
Type Designator: CTM2N7002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-23
CTM2N7002 substitution
CTM2N7002 Datasheet (PDF)
ctm2n7002.pdf

CTM2N7002Crownpo TechnologySmall Signal MOSFETFeatures General DescriptionHigh Density Cell Design for Low RDS(ON)This N-Channel enhancement mode field effect transistorVoltage Controlled Small Signal Switchis produced using high cell density,DMOS technology.TheseRugged and Reliableproducts have been designed to minimize on-stateHigh Saturation Current Capabilityresistance
Datasheet: CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , AO4407 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P .
History: FQD2N50TF
Keywords - CTM2N7002 MOSFET datasheet
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History: FQD2N50TF



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