CTM2N7002 Datasheet. Specs and Replacement
Type Designator: CTM2N7002 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
Package: SOT-23
CTM2N7002 substitution
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CTM2N7002 datasheet
ctm2n7002.pdf
CTM2N7002 Crownpo Technology Small Signal MOSFET Features General Description High Density Cell Design for Low RDS(ON) This N-Channel enhancement mode field effect transistor Voltage Controlled Small Signal Switch is produced using high cell density,DMOS technology.These Rugged and Reliable products have been designed to minimize on-state High Saturation Current Capability resistance... See More ⇒
Detailed specifications: CTM02N60, CTM04N60, CTM06N60, CTM07N60, CTM08N50, CTM09N20, CTM14N50, CTM18N20, IRF530, CTN2302, CTN2304, CTP2303, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P
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