All MOSFET. CTM2N7002 Datasheet

 

CTM2N7002 Datasheet and Replacement


   Type Designator: CTM2N7002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
 

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CTM2N7002 Datasheet (PDF)

 ..1. Size:151K  crownpo
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CTM2N7002

CTM2N7002Crownpo TechnologySmall Signal MOSFETFeatures General DescriptionHigh Density Cell Design for Low RDS(ON)This N-Channel enhancement mode field effect transistorVoltage Controlled Small Signal Switchis produced using high cell density,DMOS technology.TheseRugged and Reliableproducts have been designed to minimize on-stateHigh Saturation Current Capabilityresistance

Datasheet: CTM02N60 , CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , AO4407 , CTN2302 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P .

History: SI4622DY | VBZL80N03

Keywords - CTM2N7002 MOSFET datasheet

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