All MOSFET. CTN2302 Datasheet

 

CTN2302 Datasheet and Replacement


   Type Designator: CTN2302
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23
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CTN2302 Datasheet (PDF)

 ..1. Size:185K  crownpo
 ctn2302.pdf pdf_icon

CTN2302

CTN2302Crownpo TechnologyCTN2302 N-Channel Enhancement Mode MOSFET FeaturesDescription 20V/2.8A,RDS(ON)=85m @VGS=4.5V The CTN2302 is the N-Channel logic enhancement 20V/2.4A,R =115 m @VGS=2.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

 8.1. Size:185K  crownpo
 ctn2304.pdf pdf_icon

CTN2302

CTN2304Crownpo TechnologyCTN2304 N-Channel Enhancement Mode MOSFET FeaturesDescription 30V/2.5A,RDS(ON)=117m @VGS=10V The CTN2304 is the N-Channel logic enhancement 20V/2.4A,R =190 m @VGS=4.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - CTN2302 MOSFET datasheet

 CTN2302 cross reference
 CTN2302 equivalent finder
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