CTN2302 Datasheet and Replacement
Type Designator: CTN2302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT-23
CTN2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTN2302 Datasheet (PDF)
ctn2302.pdf
CTN2302 Crownpo Technology CTN2302 N-Channel Enhancement Mode MOSFET Features Description 20V/2.8A,RDS(ON)=85m @VGS=4.5V The CTN2302 is the N-Channel logic enhancement 20V/2.4A,R =115 m @VGS=2.5V mode power field effect transistors are produced using DS(ON) high cell density , DMOS trench technology. Super high density cell design for extremely low RDS(ON) Exc... See More ⇒
ctn2304.pdf
CTN2304 Crownpo Technology CTN2304 N-Channel Enhancement Mode MOSFET Features Description 30V/2.5A,RDS(ON)=117m @VGS=10V The CTN2304 is the N-Channel logic enhancement 20V/2.4A,R =190 m @VGS=4.5V mode power field effect transistors are produced using DS(ON) high cell density , DMOS trench technology. Super high density cell design for extremely low RDS(ON) Exc... See More ⇒
Datasheet: CTM04N60 , CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 , CS150N03A8 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD .
History: CTP2303
Keywords - CTN2302 MOSFET datasheet
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History: CTP2303
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