All MOSFET. CTN2302 Datasheet

 

CTN2302 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CTN2302
   Marking Code: 02YW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.4 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23

 CTN2302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CTN2302 Datasheet (PDF)

 ..1. Size:185K  crownpo
 ctn2302.pdf

CTN2302 CTN2302

CTN2302Crownpo TechnologyCTN2302 N-Channel Enhancement Mode MOSFET FeaturesDescription 20V/2.8A,RDS(ON)=85m @VGS=4.5V The CTN2302 is the N-Channel logic enhancement 20V/2.4A,R =115 m @VGS=2.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

 8.1. Size:185K  crownpo
 ctn2304.pdf

CTN2302 CTN2302

CTN2304Crownpo TechnologyCTN2304 N-Channel Enhancement Mode MOSFET FeaturesDescription 30V/2.5A,RDS(ON)=117m @VGS=10V The CTN2304 is the N-Channel logic enhancement 20V/2.4A,R =190 m @VGS=4.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFK120N25P

 

 
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