All MOSFET. CTN2304 Datasheet

 

CTN2304 Datasheet and Replacement


   Type Designator: CTN2304
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: SOT-23
 

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CTN2304 Datasheet (PDF)

 ..1. Size:185K  crownpo
 ctn2304.pdf pdf_icon

CTN2304

CTN2304Crownpo TechnologyCTN2304 N-Channel Enhancement Mode MOSFET FeaturesDescription 30V/2.5A,RDS(ON)=117m @VGS=10V The CTN2304 is the N-Channel logic enhancement 20V/2.4A,R =190 m @VGS=4.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

 8.1. Size:185K  crownpo
 ctn2302.pdf pdf_icon

CTN2304

CTN2302Crownpo TechnologyCTN2302 N-Channel Enhancement Mode MOSFET FeaturesDescription 20V/2.8A,RDS(ON)=85m @VGS=4.5V The CTN2302 is the N-Channel logic enhancement 20V/2.4A,R =115 m @VGS=2.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON) Exc

Datasheet: CTM06N60 , CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 , CTN2302 , IRFP450 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N .

History: QM3006M6 | 2SK2670 | IPA90R1K0C3 | 10N65KL-TF1-T | AON7702B | PMV15UNEA | SIHFIB5N65A

Keywords - CTN2304 MOSFET datasheet

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