CTN2304 Datasheet. Specs and Replacement

Type Designator: CTN2304  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm

Package: SOT-23

CTN2304 substitution

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CTN2304 datasheet

 ..1. Size:185K  crownpo
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CTN2304

CTN2304 Crownpo Technology CTN2304 N-Channel Enhancement Mode MOSFET Features Description 30V/2.5A,RDS(ON)=117m @VGS=10V The CTN2304 is the N-Channel logic enhancement 20V/2.4A,R =190 m @VGS=4.5V mode power field effect transistors are produced using DS(ON) high cell density , DMOS trench technology. Super high density cell design for extremely low RDS(ON) Exc... See More ⇒

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CTN2304

CTN2302 Crownpo Technology CTN2302 N-Channel Enhancement Mode MOSFET Features Description 20V/2.8A,RDS(ON)=85m @VGS=4.5V The CTN2302 is the N-Channel logic enhancement 20V/2.4A,R =115 m @VGS=2.5V mode power field effect transistors are produced using DS(ON) high cell density , DMOS trench technology. Super high density cell design for extremely low RDS(ON) Exc... See More ⇒

Detailed specifications: CTM06N60, CTM07N60, CTM08N50, CTM09N20, CTM14N50, CTM18N20, CTM2N7002, CTN2302, NCEP15T14, CTP2303, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P, CWDM305PD, CXDM1002N

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.