All MOSFET. CTP2303 Datasheet

 

CTP2303 Datasheet and Replacement


   Type Designator: CTP2303
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: SOT-23
 

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CTP2303 Datasheet (PDF)

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CTP2303

CTP2303Crownpo TechnologyCTP2303 P-Channel Enhancement Mode MOSFET FeaturesDescription -30V/-1.7A,RDS(ON)=240 m @VGS=- 10V The CTP2303 is the P-Channel logic enhancement -30V/-1.3A,R =460 m @VGS=-4.5V modepower field effect transistors are produced using DS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(O

Datasheet: CTM07N60 , CTM08N50 , CTM09N20 , CTM14N50 , CTM18N20 , CTM2N7002 , CTN2302 , CTN2304 , IRFP250 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N .

History: PM515BA | TPM2008EP3-A | IRFP440R | CS12N65FA9R | QS8M51 | MME70R380PRH | 25N10L-TF3-T

Keywords - CTP2303 MOSFET datasheet

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