CTP2303 Datasheet. Specs and Replacement

Type Designator: CTP2303  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: SOT-23

CTP2303 substitution

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CTP2303 datasheet

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CTP2303

CTP2303 Crownpo Technology CTP2303 P-Channel Enhancement Mode MOSFET Features Description -30V/-1.7A,RDS(ON)=240 m @VGS=- 10V The CTP2303 is the P-Channel logic enhancement -30V/-1.3A,R =460 m @VGS=-4.5V mode power field effect transistors are produced using DS(ON) high cell density , DMOS trench technology. Super high density cell design for extremely low RDS(O... See More ⇒

Detailed specifications: CTM07N60, CTM08N50, CTM09N20, CTM14N50, CTM18N20, CTM2N7002, CTN2302, CTN2304, AON7506, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P, CWDM305PD, CXDM1002N, CXDM3069N

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs