CXDM1002N Datasheet. Specs and Replacement
Type Designator: CXDM1002N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-89
CXDM1002N substitution
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CXDM1002N datasheet
cxdm1002n.pdf
CXDM1002N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM1002N is MOSFET a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMBE... See More ⇒
Detailed specifications: CTN2304, CTP2303, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P, CWDM305PD, IRFP250, CXDM3069N, CXDM4060N, CXDM4060P, CXDM6053N, CZDM1003N, D55NF06, D84DM2, D84DN2
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
