All MOSFET. CXDM1002N Datasheet

 

CXDM1002N Datasheet and Replacement


   Type Designator: CXDM1002N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-89
 

 CXDM1002N substitution

   - MOSFET ⓘ Cross-Reference Search

 

CXDM1002N Datasheet (PDF)

 ..1. Size:844K  central
 cxdm1002n.pdf pdf_icon

CXDM1002N

CXDM1002NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM1002N is MOSFETa high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBE

Datasheet: CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , STF13NM60N , CXDM3069N , CXDM4060N , CXDM4060P , CXDM6053N , CZDM1003N , D55NF06 , D84DM2 , D84DN2 .

History: NTMFS4120NT1G | SM6A22NSFP | NCE50NF220K | AM2340N | 2SK2485 | PMPB10EN | MPSW65M046CFD

Keywords - CXDM1002N MOSFET datasheet

 CXDM1002N cross reference
 CXDM1002N equivalent finder
 CXDM1002N lookup
 CXDM1002N substitution
 CXDM1002N replacement

 

 
Back to Top

 


 
.