All MOSFET. CXDM3069N Datasheet

 

CXDM3069N Datasheet and Replacement


   Type Designator: CXDM3069N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 42 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT-89

 CXDM3069N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CXDM3069N Datasheet (PDF)

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CXDM3069N

CXDM3069N SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM3069N is SILICON MOSFET a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMB... See More ⇒

Datasheet: CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , IRF1407 , CXDM4060N , CXDM4060P , CXDM6053N , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A .

History: CTM09N20

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