CXDM3069N Datasheet. Specs and Replacement
Type Designator: CXDM3069N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-89
CXDM3069N substitution
- MOSFET ⓘ Cross-Reference Search
CXDM3069N datasheet
cxdm3069n.pdf
CXDM3069N SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM3069N is SILICON MOSFET a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMB... See More ⇒
Detailed specifications: CTP2303, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P, CWDM305PD, CXDM1002N, IRF1407, CXDM4060N, CXDM4060P, CXDM6053N, CZDM1003N, D55NF06, D84DM2, D84DN2, DE150-101N09A
Keywords - CXDM3069N MOSFET specs
CXDM3069N cross reference
CXDM3069N equivalent finder
CXDM3069N pdf lookup
CXDM3069N substitution
CXDM3069N replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
