CXDM4060N Datasheet. Specs and Replacement
Type Designator: CXDM4060N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 58 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOT-89
CXDM4060N substitution
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CXDM4060N datasheet
cxdm4060n.pdf
CXDM4060N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM4060N is a MOSFET high current silicon N-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMBER... See More ⇒
cxdm4060p.pdf
CXDM4060P SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM4060P is a MOSFET high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge. MARKING FULL PART NUMBER ... See More ⇒
Detailed specifications: CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P, CWDM305PD, CXDM1002N, CXDM3069N, 2SK3568, CXDM4060P, CXDM6053N, CZDM1003N, D55NF06, D84DM2, D84DN2, DE150-101N09A, DE150-102N02A
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