All MOSFET. CXDM4060N Datasheet

 

CXDM4060N Datasheet and Replacement


   Type Designator: CXDM4060N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SOT-89
 

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CXDM4060N Datasheet (PDF)

 ..1. Size:839K  central
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CXDM4060N

CXDM4060NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060N is aMOSFEThigh current silicon N-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier anddriver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.MARKING: FULL PART NUMBER

 6.1. Size:848K  central
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CXDM4060N

CXDM4060PSURFACE MOUNT SILICONwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CXDM4060P is aMOSFEThigh current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge.MARKING: FULL PART NUMBER

Datasheet: CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , 5N65 , CXDM4060P , CXDM6053N , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A .

History: HY3208M | TSF13N50M | RQK0608BQDQS | AP6679GH-HF | NTJD4152PT1G | VBM2625 | IPA65R099C6

Keywords - CXDM4060N MOSFET datasheet

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