All MOSFET. CXDM4060N Datasheet

 

CXDM4060N Datasheet and Replacement


   Type Designator: CXDM4060N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SOT-89

 CXDM4060N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CXDM4060N Datasheet (PDF)

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CXDM4060N

CXDM4060N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM4060N is a MOSFET high current silicon N-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING FULL PART NUMBER... See More ⇒

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CXDM4060N

CXDM4060P SURFACE MOUNT SILICON www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM4060P is a MOSFET high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge. MARKING FULL PART NUMBER ... See More ⇒

Datasheet: CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , 2SK3568 , CXDM4060P , CXDM6053N , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A .

History: CXDM4060P

Keywords - CXDM4060N MOSFET datasheet

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