All MOSFET. CZDM1003N Datasheet

 

CZDM1003N Datasheet and Replacement


   Type Designator: CZDM1003N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-223
 

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CZDM1003N Datasheet (PDF)

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CZDM1003N

CZDM1003NSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CZDM1003N is aMOSFET3.0 Amp, 100 Volt silicon N-Channel enhancement-mode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge.MARKING: FULL PART NUMBERSOT-223 CASEFEATURES:APPL

Datasheet: CWDM305ND , CWDM305P , CWDM305PD , CXDM1002N , CXDM3069N , CXDM4060N , CXDM4060P , CXDM6053N , SKD502T , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A , DE150-201N09A , DE150-501N04A , DE275-101N30A .

History: NCE70T360F | AP4224GM-HF | PA110BC | CHM3258JGP | KRF7604 | ECH8671 | NCE60N2K1D

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