CZDM1003N Datasheet. Specs and Replacement

Type Designator: CZDM1003N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-223

CZDM1003N substitution

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CZDM1003N datasheet

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CZDM1003N

CZDM1003N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CZDM1003N is a MOSFET 3.0 Amp, 100 Volt silicon N-Channel enhancement- mode MOSFET, designed for motor control and relay driver applications. This MOSFET offers high current, low rDS(ON), and low gate charge. MARKING FULL PART NUMBER SOT-223 CASE FEATURES APPL... See More ⇒

Detailed specifications: CWDM305ND, CWDM305P, CWDM305PD, CXDM1002N, CXDM3069N, CXDM4060N, CXDM4060P, CXDM6053N, RFP50N06, D55NF06, D84DM2, D84DN2, DE150-101N09A, DE150-102N02A, DE150-201N09A, DE150-501N04A, DE275-101N30A

Keywords - CZDM1003N MOSFET specs

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