D55NF06 Datasheet. Specs and Replacement
Type Designator: D55NF06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-252
D55NF06 substitution
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D55NF06 datasheet
d55nf06 f55nf06 p55nf06 u55nf06.pdf
55NF06 Pb 55NF06 Pb Free Plating Product N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET 1 2 TO-251/IPAK 3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12 threshold voltages of 4 volt. TO-... See More ⇒
Detailed specifications: CWDM305P, CWDM305PD, CXDM1002N, CXDM3069N, CXDM4060N, CXDM4060P, CXDM6053N, CZDM1003N, SI2302, D84DM2, D84DN2, DE150-101N09A, DE150-102N02A, DE150-201N09A, DE150-501N04A, DE275-101N30A, DE275-102N06A
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