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DK64N90B Spec and Replacement


   Type Designator: DK64N90B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 92 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00745 Ohm
   Package: TO-263

 DK64N90B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DK64N90B Specs

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DK64N90B

DK64N90 Pb DK64N90 Pb Free Plating Product N-Channel Trench Process Power MOSFET Transistors General Description DK64N90 (TO-220 HeatSink) DK64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G ... See More ⇒

Detailed specifications: DI9430T , DI9435T , DK48N18 , DK48N75 , DK48N78 , DK48N80 , DK48N88 , DK64N90 , AO4407A , DK64N90F , DKI03038 , DKI03062 , DKI03082 , DKI04035 , DKI04046 , DKI04077 , DKI04103 .

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