DL2M50N5 Spec and Replacement
Type Designator: DL2M50N5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 105 nC
tr ⓘ - Rise Time: 360 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: 6DM-2
DL2M50N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DL2M50N5 Specs
dl2m50n5.pdf
D WTM D WTM DAWIN Electronics DAWIN Electronics DL2M50N5 Apr. 2008 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN S Dual power MOSFET devices are designed for switching applications of high voltage and current. (You have to connect external Equivalent Circuit fast recovery diode reverse connected across each MOSFET) The mounting base of the module ... See More ⇒
Detailed specifications: DKI06075 , DKI06108 , DKI06186 , DKI06261 , DKI10299 , DKI10526 , DKI10751 , DL2M100N5 , IRLZ44N , DMC1017UPD , DMC1028UFDB , DMC1029UFDB , DMC1030UFDB , DMC1229UFDB , DMC2038LVT , DMC2041UFDB , DMC2400UV .
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