DL2M50N5 Datasheet. Specs and Replacement
Type Designator: DL2M50N5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 360 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: 6DM-2
DL2M50N5 substitution
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DL2M50N5 datasheet
dl2m50n5.pdf
D WTM D WTM DAWIN Electronics DAWIN Electronics DL2M50N5 Apr. 2008 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN S Dual power MOSFET devices are designed for switching applications of high voltage and current. (You have to connect external Equivalent Circuit fast recovery diode reverse connected across each MOSFET) The mounting base of the module ... See More ⇒
Detailed specifications: DKI06075, DKI06108, DKI06186, DKI06261, DKI10299, DKI10526, DKI10751, DL2M100N5, IRLZ44N, DMC1017UPD, DMC1028UFDB, DMC1029UFDB, DMC1030UFDB, DMC1229UFDB, DMC2038LVT, DMC2041UFDB, DMC2400UV
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
