All MOSFET. DMC1229UFDB Datasheet

 

DMC1229UFDB MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMC1229UFDB
   Marking Code: D2
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: U-DFN2020-6

 DMC1229UFDB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMC1229UFDB Datasheet (PDF)

 ..1. Size:292K  diodes
 dmc1229ufdb.pdf

DMC1229UFDB DMC1229UFDB

DMC1229UFDBCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID MAX Device V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 29m @ VGS = 4.5V 5.6A 34m @ VGS = 2.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Q1 12V N-Channel 44m @ VGS = 1.8V 4.5A Halogen

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