DMG4511SK4 Datasheet. Specs and Replacement

Type Designator: DMG4511SK4  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 64.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO-252

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DMG4511SK4 datasheet

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DMG4511SK4

DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 35V 35m @ VGS = 10V 13A Fast Switching Speed Low Input/Output Leakage -35V 45m @ VGS = -10V -12A Complementary Pair MOSFET Lead Free/RoHS Compliant ... See More ⇒

Detailed specifications: DMG302PU, DMG3402L, DMG3404L, DMG3406L, DMG3413L, DMG3418L, DMG4406LSS, DMG4407SSS, 12N60, DMG4710SSS, DMG4812SSS, DMG4932LSD, DMG4N65CT, DMG4N65CTI, DMG6301UDW, DMG6402LVT, DMG6601LVT

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