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DMG4511SK4 Spec and Replacement


   Type Designator: DMG4511SK4
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 64.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-252

 DMG4511SK4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG4511SK4 Specs

 ..1. Size:196K  diodes
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DMG4511SK4

DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 35V 35m @ VGS = 10V 13A Fast Switching Speed Low Input/Output Leakage -35V 45m @ VGS = -10V -12A Complementary Pair MOSFET Lead Free/RoHS Compliant ... See More ⇒

Detailed specifications: DMG302PU , DMG3402L , DMG3404L , DMG3406L , DMG3413L , DMG3418L , DMG4406LSS , DMG4407SSS , 12N60 , DMG4710SSS , DMG4812SSS , DMG4932LSD , DMG4N65CT , DMG4N65CTI , DMG6301UDW , DMG6402LVT , DMG6601LVT .

Keywords - DMG4511SK4 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
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