DMG4710SSS Datasheet. Specs and Replacement

Type Designator: DMG4710SSS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.73 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: SO-8

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DMG4710SSS datasheet

 ..1. Size:169K  diodes
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DMG4710SSS

DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver V(BR)DSS RDS(on) TA = 25 C (Note 5) Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction 12.5m @ ... See More ⇒

 8.1. Size:152K  diodes
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DMG4710SSS

DMG4712SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case SO-8 Low Leakage Current at High Temperature Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity Level 1 per J-STD-020... See More ⇒

Detailed specifications: DMG3402L, DMG3404L, DMG3406L, DMG3413L, DMG3418L, DMG4406LSS, DMG4407SSS, DMG4511SK4, 5N65, DMG4812SSS, DMG4932LSD, DMG4N65CT, DMG4N65CTI, DMG6301UDW, DMG6402LVT, DMG6601LVT, DMG6602SVTQ

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