All MOSFET. DMG4710SSS Datasheet

 

DMG4710SSS MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMG4710SSS
   Marking Code: G4710SS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 8.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18.5 nC
   trⓘ - Rise Time: 8.73 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SO-8

 DMG4710SSS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG4710SSS Datasheet (PDF)

 ..1. Size:169K  diodes
 dmg4710sss.pdf

DMG4710SSS DMG4710SSS

DMG4710SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver: V(BR)DSS RDS(on) TA = 25C (Note 5) Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction12.5m @

 8.1. Size:152K  diodes
 dmg4712sss.pdf

DMG4710SSS DMG4710SSS

DMG4712SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Low Leakage Current at High Temperature Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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