All MOSFET. DMG4710SSS Datasheet

 

DMG4710SSS Datasheet and Replacement


   Type Designator: DMG4710SSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.73 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SO-8
 

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DMG4710SSS Datasheet (PDF)

 ..1. Size:169K  diodes
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DMG4710SSS

DMG4710SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary Features DIOFET utilizes a unique patented process to monolithically ID max integrate a MOSFET and a Schottky in a single die to deliver: V(BR)DSS RDS(on) TA = 25C (Note 5) Low RDS(ON) - minimizes conduction losses Low VSD - reducing the losses due to body diode conduction12.5m @

 8.1. Size:152K  diodes
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DMG4710SSS

DMG4712SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Low Leakage Current at High Temperature Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020

Datasheet: DMG3402L , DMG3404L , DMG3406L , DMG3413L , DMG3418L , DMG4406LSS , DMG4407SSS , DMG4511SK4 , 4435 , DMG4812SSS , DMG4932LSD , DMG4N65CT , DMG4N65CTI , DMG6301UDW , DMG6402LVT , DMG6601LVT , DMG6602SVTQ .

History: PSMN2R1-40PL | SIL05N06 | S70N08ZR | NCEP0107AR | HM25P03Q | GSM4946 | PHD87N03LT

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