All MOSFET. DMG4932LSD Datasheet

 

DMG4932LSD Datasheet and Replacement


   Type Designator: DMG4932LSD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.22 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SO-8
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DMG4932LSD Datasheet (PDF)

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DMG4932LSD

DMG4932LSDASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Low Leakage Current at High Temp. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020 Lo

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History: DMN2009USS | CED05N8 | MC08N005C | AON6794 | AP10TN135K | IRLR024 | BL10N70-A

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