All MOSFET. DMG4932LSD Datasheet

 

DMG4932LSD Datasheet and Replacement


   Type Designator: DMG4932LSD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.22 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SO-8
 

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DMG4932LSD Datasheet (PDF)

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DMG4932LSD

DMG4932LSDASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Low Leakage Current at High Temp. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020 Lo

Datasheet: DMG3406L , DMG3413L , DMG3418L , DMG4406LSS , DMG4407SSS , DMG4511SK4 , DMG4710SSS , DMG4812SSS , AON7506 , DMG4N65CT , DMG4N65CTI , DMG6301UDW , DMG6402LVT , DMG6601LVT , DMG6602SVTQ , DMG7401SFG , DMG7408SFG .

History: IRF7805ZPBF-1 | AP20T03GH-HF

Keywords - DMG4932LSD MOSFET datasheet

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