DMG4932LSD Datasheet. Specs and Replacement

Type Designator: DMG4932LSD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.22 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SO-8

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DMG4932LSD datasheet

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DMG4932LSD

DMG4932LSD ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case SO-8 Low Leakage Current at High Temp. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity Level 1 per J-STD-020 Lo... See More ⇒

Detailed specifications: DMG3406L, DMG3413L, DMG3418L, DMG4406LSS, DMG4407SSS, DMG4511SK4, DMG4710SSS, DMG4812SSS, IRFB3607, DMG4N65CT, DMG4N65CTI, DMG6301UDW, DMG6402LVT, DMG6601LVT, DMG6602SVTQ, DMG7401SFG, DMG7408SFG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.