All MOSFET. DMG6301UDW Datasheet

 

DMG6301UDW Datasheet and Replacement


   Type Designator: DMG6301UDW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.8 nS
   Cossⓘ - Output Capacitance: 6.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT-363
 

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DMG6301UDW Datasheet (PDF)

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DMG6301UDW

DMG6301UDW25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage 4 @ VGS = 4.5V 0.24A Low Input Capacitance 25V 5 @ VGS = 2.7V 0.22A Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate (>6kV Human Body Model) Totally

Datasheet: DMG4406LSS , DMG4407SSS , DMG4511SK4 , DMG4710SSS , DMG4812SSS , DMG4932LSD , DMG4N65CT , DMG4N65CTI , IRLB4132 , DMG6402LVT , DMG6601LVT , DMG6602SVTQ , DMG7401SFG , DMG7408SFG , DMG7410SFG , DMG7430LFG , DMG7702SFG .

History: SPA11N60CFD | UT60N03G-TM3-T | SVFP12N65CFJD | AOB12N65L | NVD5C648NL | SCH1333 | UT8205AL-AL6-R

Keywords - DMG6301UDW MOSFET datasheet

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