All MOSFET. DMG6402LVT Datasheet

 

DMG6402LVT Datasheet and Replacement


   Type Designator: DMG6402LVT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.2 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSOT26
 

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DMG6402LVT Datasheet (PDF)

 ..1. Size:221K  diodes
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DMG6402LVT

DMG6402LVT30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 30m @ VGS = 10V 6A 30V Totally Lead-Free Finish; RoHS compliant (Note 1 & 2) 42m @ VGS = 4.5V 5A Halogen and Antimony Free. Green Device (Note 3) Qualified

 6.1. Size:156K  diodes
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DMG6402LVT

DMG6402LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON) Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish - Matte Tin Solderable per MIL-S

Datasheet: DMG4407SSS , DMG4511SK4 , DMG4710SSS , DMG4812SSS , DMG4932LSD , DMG4N65CT , DMG4N65CTI , DMG6301UDW , IRFP450 , DMG6601LVT , DMG6602SVTQ , DMG7401SFG , DMG7408SFG , DMG7410SFG , DMG7430LFG , DMG7702SFG , DMG9N65CT .

History: FXN32N55T | AO3495

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