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DMG7702SFG Spec and Replacement


   Type Designator: DMG7702SFG
   Marking Code: G72
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 14.7 nC
   tr ⓘ - Rise Time: 27.8 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: POWERDI3333

 DMG7702SFG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMG7702SFG Specs

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DMG7702SFG

DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver TA = +25 C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12 A Low VSD reducing the losses due to bo... See More ⇒

Detailed specifications: DMG6301UDW , DMG6402LVT , DMG6601LVT , DMG6602SVTQ , DMG7401SFG , DMG7408SFG , DMG7410SFG , DMG7430LFG , 4N60 , DMG9N65CT , DMG9N65CTI , DMGD7N45SSD , DMHC10H170SFJ , DMHC3025LSD , DMHC4035LSD , DMJ7N70SK3 , DMN1019UFDE .

Keywords - DMG7702SFG MOSFET specs

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