DMG7702SFG MOSFET. Datasheet pdf. Equivalent
Type Designator: DMG7702SFG
Marking Code: G72
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.7 nC
trⓘ - Rise Time: 27.8 nS
Cossⓘ - Output Capacitance: 415 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: POWERDI3333
DMG7702SFG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMG7702SFG Datasheet (PDF)
dmg7702sfg.pdf
DMG7702SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver: TA = +25C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12 A Low VSD reducing the losses due to bo
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