DMGD7N45SSD Spec and Replacement
Type Designator: DMGD7N45SSD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.64 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 22.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SO-8
DMGD7N45SSD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMGD7N45SSD Specs
dmgd7n45ssd.pdf
DMGD7N45SSD 450V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) MAX TA = +25 C High BVDss Rating for Power Application Low Input/Output Leakage 450V 4 @ VGS = 10V 0.85A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description ... See More ⇒
Detailed specifications: DMG6602SVTQ , DMG7401SFG , DMG7408SFG , DMG7410SFG , DMG7430LFG , DMG7702SFG , DMG9N65CT , DMG9N65CTI , 2SK3568 , DMHC10H170SFJ , DMHC3025LSD , DMHC4035LSD , DMJ7N70SK3 , DMN1019UFDE , DMN1019USN , DMN1019UVT , DMN1025UFDB .
History: NTMS4816NR2G
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: NTMS4816NR2G
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