All MOSFET. DMHC4035LSD Datasheet

 

DMHC4035LSD Datasheet and Replacement


   Type Designator: DMHC4035LSD
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 87.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO-8
 

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DMHC4035LSD Datasheet (PDF)

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DMHC4035LSD

DMHC4035LSD40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features 2 x N + 2 x P channels in a SOIC package ID max Device V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Low Input Capacitance 45m @ VGS = 10V 4.5A N-Channel 40V Fast Switching Speed 58m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Datasheet: DMG7410SFG , DMG7430LFG , DMG7702SFG , DMG9N65CT , DMG9N65CTI , DMGD7N45SSD , DMHC10H170SFJ , DMHC3025LSD , SKD502T , DMJ7N70SK3 , DMN1019UFDE , DMN1019USN , DMN1019UVT , DMN1025UFDB , DMN1029UFDB , DMN1032UCB4 , DMN1033UCB4 .

History: TDM3484 | AOLF66610 | TPCS8303 | VBE2309 | IXTK210P10T | CEDM7002AE | APT66M60B2

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