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DMHC4035LSD Spec and Replacement


   Type Designator: DMHC4035LSD
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 87.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO-8

 DMHC4035LSD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMHC4035LSD Specs

 ..1. Size:372K  diodes
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DMHC4035LSD

DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features 2 x N + 2 x P channels in a SOIC package ID max Device V(BR)DSS RDS(ON) max TA = +25 C Low On-Resistance Low Input Capacitance 45m @ VGS = 10V 4.5A N-Channel 40V Fast Switching Speed 58m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ... See More ⇒

Detailed specifications: DMG7410SFG , DMG7430LFG , DMG7702SFG , DMG9N65CT , DMG9N65CTI , DMGD7N45SSD , DMHC10H170SFJ , DMHC3025LSD , RFP50N06 , DMJ7N70SK3 , DMN1019UFDE , DMN1019USN , DMN1019UVT , DMN1025UFDB , DMN1029UFDB , DMN1032UCB4 , DMN1033UCB4 .

History: NTP5426NG | ZXM64N02XTA | NTMS4873NFR2G | NTP5412NG | DMG9N65CTI

Keywords - DMHC4035LSD MOSFET specs

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