DMHC4035LSD Datasheet. Specs and Replacement
Type Designator: DMHC4035LSD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 87.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO-8
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DMHC4035LSD substitution
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DMHC4035LSD datasheet
dmhc4035lsd.pdf
DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features 2 x N + 2 x P channels in a SOIC package ID max Device V(BR)DSS RDS(ON) max TA = +25 C Low On-Resistance Low Input Capacitance 45m @ VGS = 10V 4.5A N-Channel 40V Fast Switching Speed 58m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ... See More ⇒
Detailed specifications: DMG7410SFG, DMG7430LFG, DMG7702SFG, DMG9N65CT, DMG9N65CTI, DMGD7N45SSD, DMHC10H170SFJ, DMHC3025LSD, RFP50N06, DMJ7N70SK3, DMN1019UFDE, DMN1019USN, DMN1019UVT, DMN1025UFDB, DMN1029UFDB, DMN1032UCB4, DMN1033UCB4
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