DMJ7N70SK3 Datasheet. Specs and Replacement
Type Designator: DMJ7N70SK3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.6 nS
Cossⓘ - Output Capacitance: 66 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO-252
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DMJ7N70SK3 datasheet
dmj7n70sk3.pdf
DMJ7N70SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Gate Input Resistance TC = +25 C Low Input Capacitance 700V 1.25 @ VGS = 10V 3.9A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) ... See More ⇒
dmj7n70sk3.pdf
isc N-Channel MOSFET Transistor DMJ7N70SK3 FEATURES Static drain-source on-resistance RDS(on) 1.25 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 700 V DSS V Gate-Source Voltage 30 ... See More ⇒
Detailed specifications: DMG7430LFG, DMG7702SFG, DMG9N65CT, DMG9N65CTI, DMGD7N45SSD, DMHC10H170SFJ, DMHC3025LSD, DMHC4035LSD, SI2302, DMN1019UFDE, DMN1019USN, DMN1019UVT, DMN1025UFDB, DMN1029UFDB, DMN1032UCB4, DMN1033UCB4, DMN1045UFR4
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