All MOSFET. DMJ7N70SK3 Datasheet

 

DMJ7N70SK3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMJ7N70SK3
   Marking Code: J7N70S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.9 nC
   trⓘ - Rise Time: 11.6 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO-252

 DMJ7N70SK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMJ7N70SK3 Datasheet (PDF)

 ..1. Size:278K  diodes
dmj7n70sk3.pdf

DMJ7N70SK3 DMJ7N70SK3

DMJ7N70SK3700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Gate Input Resistance TC = +25C Low Input Capacitance 700V 1.25 @ VGS = 10V 3.9A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 ..2. Size:241K  inchange semiconductor
dmj7n70sk3.pdf

DMJ7N70SK3 DMJ7N70SK3

isc N-Channel MOSFET Transistor DMJ7N70SK3FEATURESStatic drain-source on-resistance:RDS(on)1.25100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 700 VDSSV Gate-Source Voltage 30

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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