DMJ7N70SK3 Spec and Replacement
Type Designator: DMJ7N70SK3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.6 nS
Cossⓘ - Output Capacitance: 66 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO-252
DMJ7N70SK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMJ7N70SK3 Specs
dmj7n70sk3.pdf
DMJ7N70SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Gate Input Resistance TC = +25 C Low Input Capacitance 700V 1.25 @ VGS = 10V 3.9A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) ... See More ⇒
dmj7n70sk3.pdf
isc N-Channel MOSFET Transistor DMJ7N70SK3 FEATURES Static drain-source on-resistance RDS(on) 1.25 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 700 V DSS V Gate-Source Voltage 30 ... See More ⇒
Detailed specifications: DMG7430LFG , DMG7702SFG , DMG9N65CT , DMG9N65CTI , DMGD7N45SSD , DMHC10H170SFJ , DMHC3025LSD , DMHC4035LSD , SI2302 , DMN1019UFDE , DMN1019USN , DMN1019UVT , DMN1025UFDB , DMN1029UFDB , DMN1032UCB4 , DMN1033UCB4 , DMN1045UFR4 .
Keywords - DMJ7N70SK3 MOSFET specs
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