All MOSFET. DMN1150UFB Datasheet

 

DMN1150UFB Datasheet and Replacement


   Type Designator: DMN1150UFB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 1.41 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34.5 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: X1-DFN1006-3
 

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DMN1150UFB Datasheet (PDF)

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DMN1150UFB

DMN1150UFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 0.15 @ VGS = 4.5V 1.41A Fast Switching Speed 12V 1.25A 0.185 @ VGS = 2.5V ESD Protected Gate 0.21 @ VGS = 1.8V 1.16A Totally Lead-Free & Fully Ro

Datasheet: DMN10H120SFG , DMN10H170SFDE , DMN10H170SFG , DMN10H170SK3 , DMN10H170SVT , DMN10H220L , DMN10H220LE , DMN10H220LVT , AON7403 , DMN1260UFA , DMN13H750S , DMN15H310SE , DMN2005UFG , DMN2011UFDE , DMN2011UFX , DMN2013UFDE , DMN2013UFX .

History: SI2312BDS | PQ6X6JN | CJCD2003 | SL10N65F | CEM8809 | TSM3457CX6 | BRCS200N03YN

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