DMN1150UFB Datasheet. Specs and Replacement
Type Designator: DMN1150UFB 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 1.41 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34.5 nS
Cossⓘ - Output Capacitance: 23 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: X1-DFN1006-3
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DMN1150UFB substitution
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DMN1150UFB datasheet
dmn1150ufb.pdf
DMN1150UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25 C Low Input Capacitance 0.15 @ VGS = 4.5V 1.41A Fast Switching Speed 12V 1.25A 0.185 @ VGS = 2.5V ESD Protected Gate 0.21 @ VGS = 1.8V 1.16A Totally Lead-Free & Fully Ro... See More ⇒
Detailed specifications: DMN10H120SFG, DMN10H170SFDE, DMN10H170SFG, DMN10H170SK3, DMN10H170SVT, DMN10H220L, DMN10H220LE, DMN10H220LVT, IRF9640, DMN1260UFA, DMN13H750S, DMN15H310SE, DMN2005UFG, DMN2011UFDE, DMN2011UFX, DMN2013UFDE, DMN2013UFX
Keywords - DMN1150UFB MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
