All MOSFET. DMN1150UFB Datasheet

 

DMN1150UFB Datasheet and Replacement


   Type Designator: DMN1150UFB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 1.41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34.5 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: X1-DFN1006-3
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DMN1150UFB Datasheet (PDF)

 ..1. Size:258K  diodes
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DMN1150UFB

DMN1150UFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 0.15 @ VGS = 4.5V 1.41A Fast Switching Speed 12V 1.25A 0.185 @ VGS = 2.5V ESD Protected Gate 0.21 @ VGS = 1.8V 1.16A Totally Lead-Free & Fully Ro

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STU40N01 | SFB052N100C2 | TSM4424CS | BLP12N10G-D | PSMN085-150K | SM2F04NSU | BRCS200P03DP

Keywords - DMN1150UFB MOSFET datasheet

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