DMN1260UFA Datasheet. Specs and Replacement
Type Designator: DMN1260UFA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18.8 nS
Cossⓘ - Output Capacitance: 13.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.366 Ohm
Package: X2-DFN0806-3
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DMN1260UFA datasheet
dmn1260ufa.pdf
DMN1260UFA 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID MAX V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25 C 366m @ VGS = 4.5V Low On-Resistance 520m @ VGS = 2.5V Low Input Capacitance 12V 0.5A 950m @ VGS = 1.8V ESD Protected Gat... See More ⇒
Detailed specifications: DMN10H170SFDE, DMN10H170SFG, DMN10H170SK3, DMN10H170SVT, DMN10H220L, DMN10H220LE, DMN10H220LVT, DMN1150UFB, IRFB7545, DMN13H750S, DMN15H310SE, DMN2005UFG, DMN2011UFDE, DMN2011UFX, DMN2013UFDE, DMN2013UFX, DMN2014LHAB
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
