DMN13H750S Datasheet. Specs and Replacement
Type Designator: DMN13H750S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 130 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: SOT-23
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DMN13H750S datasheet
dmn13h750s.pdf
DMN13H750S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage Low Input Capacitance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25 C Small Surface Mount Package 0.75 @ VGS = 10V 1.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 130V 0.85 @ VGS = 6.0V 0.9A Halogen and Antimony... See More ⇒
Detailed specifications: DMN10H170SFG, DMN10H170SK3, DMN10H170SVT, DMN10H220L, DMN10H220LE, DMN10H220LVT, DMN1150UFB, DMN1260UFA, AON7403, DMN15H310SE, DMN2005UFG, DMN2011UFDE, DMN2011UFX, DMN2013UFDE, DMN2013UFX, DMN2014LHAB, DMN2015UFDE
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