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DMN13H750S Spec and Replacement


   Type Designator: DMN13H750S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 130 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.7 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: SOT-23

 DMN13H750S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN13H750S Specs

 ..1. Size:616K  diodes
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DMN13H750S

DMN13H750S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage Low Input Capacitance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25 C Small Surface Mount Package 0.75 @ VGS = 10V 1.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 130V 0.85 @ VGS = 6.0V 0.9A Halogen and Antimony... See More ⇒

Detailed specifications: DMN10H170SFG , DMN10H170SK3 , DMN10H170SVT , DMN10H220L , DMN10H220LE , DMN10H220LVT , DMN1150UFB , DMN1260UFA , AON7403 , DMN15H310SE , DMN2005UFG , DMN2011UFDE , DMN2011UFX , DMN2013UFDE , DMN2013UFX , DMN2014LHAB , DMN2015UFDE .

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