DMN3010LFG Specs and Replacement
Type Designator: DMN3010LFG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19.6 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: POWERDI-3333-8
DMN3010LFG substitution
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DMN3010LFG datasheet
dmn3010lfg.pdf
DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A ... See More ⇒
dmn3010lfg-7.pdf
DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A ... See More ⇒
dmn3010lk3.pdf
DMN3010LK3 Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher 9.5m @ VGS = 10V 43A density end products 30V 11.5m @ VGS = 4.5V 39A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and ... See More ⇒
Detailed specifications: DMN24H3D5L, DMN2500UFB4, DMN2501UFB4, DMN2550UFA, DMN25D0UFA, DMN2990UFA, DMN2990UFZ, DMN3008SFG, AON7408, DMN3010LK3, DMN3015LSD, DMN3016LDN, DMN3016LFDE, DMN3016LK3, DMN3016LPS, DMN3016LSS, DMN3018SFG
Keywords - DMN3010LFG MOSFET specs
DMN3010LFG cross reference
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DMN3010LFG substitution
DMN3010LFG replacement
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