DMN3010LFG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMN3010LFG
Маркировка: G10
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 16.1 nC
trⓘ - Время нарастания: 19.6 ns
Cossⓘ - Выходная емкость: 190 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: POWERDI-3333-8
Аналог (замена) для DMN3010LFG
DMN3010LFG Datasheet (PDF)
dmn3010lfg.pdf
DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A
dmn3010lfg-7.pdf
DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A
dmn3010lss.pdf
DMN3010LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 9m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 13m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D
dmn3010lk3.pdf
DMN3010LK3GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25C Small form factor thermally efficient package enables higher 9.5m @ VGS = 10V 43A density end products 30V 11.5m @ VGS = 4.5V 39A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and
dmn3010lk3.pdf
isc N-Channel MOSFET Transistor DMN3010LK3FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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