All MOSFET. DMN3018SSS-13 Datasheet

 

DMN3018SSS-13 Datasheet and Replacement


   Type Designator: DMN3018SSS-13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SO-8
 

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DMN3018SSS-13 Datasheet (PDF)

 4.1. Size:212K  diodes
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DMN3018SSS-13

DMN3018SSS30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 21m @ VGS = 10V 7.3A ESD Protected Gate Green component and RoHS compliant (Notes 1 & 2) 30V 35m @ VGS = 4.5V 5.5A Qualified to AEC-Q101 standards for

 5.1. Size:297K  diodes
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DMN3018SSS-13

DMN3018SSD30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C 100% UIS (Avalanche) Rated 22m @ VGS = 10V 6.7A ESD Protected Gate 30V 30m @ VGS = 4.5V 5.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Quali

 6.1. Size:256K  diodes
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DMN3018SSS-13

DMN3018SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 21m @ VGS = 10V 8.5A 30V Occupies just 33% of the board area occupied by SO-8 enabling 35m @ VG

Datasheet: DMN3015LSD , DMN3016LDN , DMN3016LFDE , DMN3016LK3 , DMN3016LPS , DMN3016LSS , DMN3018SFG , DMN3018SSD , 2SK3568 , DMN3024SFG , DMN3025LFG , DMN3025LSS , DMN3026LVT , DMN3029LFG , DMN3030LFG , DMN3032LE , DMN3033LSNQ .

History: AP9973GJ-HF | SFF440 | SIHF9530S

Keywords - DMN3018SSS-13 MOSFET datasheet

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