DMN3018SSS-13
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3018SSS-13
Marking Code: N3018SS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 7.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6
nC
trⓘ - Rise Time: 4.4
nS
Cossⓘ -
Output Capacitance: 97
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
SO-8
DMN3018SSS-13
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3018SSS-13
Datasheet (PDF)
4.1. Size:212K diodes
dmn3018sss.pdf
DMN3018SSS30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 21m @ VGS = 10V 7.3A ESD Protected Gate Green component and RoHS compliant (Notes 1 & 2) 30V 35m @ VGS = 4.5V 5.5A Qualified to AEC-Q101 standards for
5.1. Size:297K diodes
dmn3018ssd.pdf
DMN3018SSD30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C 100% UIS (Avalanche) Rated 22m @ VGS = 10V 6.7A ESD Protected Gate 30V 30m @ VGS = 4.5V 5.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Quali
6.1. Size:256K diodes
dmn3018sfg.pdf
DMN3018SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 21m @ VGS = 10V 8.5A 30V Occupies just 33% of the board area occupied by SO-8 enabling 35m @ VG
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