DMN3900UFA Specs and Replacement

Type Designator: DMN3900UFA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.8 nS

Cossⓘ - Output Capacitance: 4.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: X2-DFN0806-3

DMN3900UFA substitution

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DMN3900UFA datasheet

 ..1. Size:277K  diodes
dmn3900ufa.pdf pdf_icon

DMN3900UFA

DMN3900UFA 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.4mm ultra low profile package for thin application V(BR)DSS RDS(on) TA = +25 C 0.48mm2 package footprint, 16 times smaller than SOT23 760m @ VGS = 4.5V 0.65A Low VGS(th), can be driven directly from a battery 30V 930m @ VGS = 2.5V 0.58A Low RDS(on) 1500m @ VGS = 1.8V 0.4... See More ⇒

Detailed specifications: DMN3190LDW, DMN31D5UFZ, DMN32D4SDW, DMN33D8L, DMN33D8LDW, DMN33D8LT, DMN33D8LV, DMN3730UFB-7, 18N50, DMN4008LFG, DMN4010LFG, DMN4010LK3, DMN4020LFDE, DMN4026SK3, DMN4026SSD, DMN4060SVT-7, DMN53D0L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.