All MOSFET. DMN3900UFA Datasheet

 

DMN3900UFA Datasheet and Replacement


   Type Designator: DMN3900UFA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 4.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm
   Package: X2-DFN0806-3
 

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DMN3900UFA Datasheet (PDF)

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DMN3900UFA

DMN3900UFA30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.4mm ultra low profile package for thin application V(BR)DSS RDS(on) TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 760m @ VGS = 4.5V 0.65A Low VGS(th), can be driven directly from a battery 30V 930m @ VGS = 2.5V 0.58A Low RDS(on) 1500m @ VGS = 1.8V 0.4

Datasheet: DMN3190LDW , DMN31D5UFZ , DMN32D4SDW , DMN33D8L , DMN33D8LDW , DMN33D8LT , DMN33D8LV , DMN3730UFB-7 , 75N75 , DMN4008LFG , DMN4010LFG , DMN4010LK3 , DMN4020LFDE , DMN4026SK3 , DMN4026SSD , DMN4060SVT-7 , DMN53D0L .

History: FDI2532 | ELM14430AA | IXTH6N150 | RJK0629DPE | NCE65N900F | DMG2302UK | H5N2504DS

Keywords - DMN3900UFA MOSFET datasheet

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