SFM9110 Datasheet and Replacement
Type Designator: SFM9110
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT223
SFM9110 substitution
SFM9110 Datasheet (PDF)
sfm9110.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V2 Lower RDS(ON) : 0.912 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristi
sfm9110tf.pdf

SFM9110Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -1.0 An Improved Gate Chargen Extended Safe Operating AreaSOT-223n Lower Leakage Current : 10 A(Max.) @ VDS = -100V2n Lower RDS(ON) : 0.912 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum Ratings
sfm9120.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V2 Lower RDS(ON) : 0.444 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristi
Datasheet: SFI9630 , SFI9634 , SFI9640 , SFI9644 , SFI9Z14 , SFI9Z24 , SFI9Z34 , SFM9014 , STF13NM60N , SFM9120 , SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , SFP9530 , SFP9540 .
History: TMP10N60
Keywords - SFM9110 MOSFET datasheet
SFM9110 cross reference
SFM9110 equivalent finder
SFM9110 lookup
SFM9110 substitution
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History: TMP10N60



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