All MOSFET. DMP25H18DLFDE Datasheet

 

DMP25H18DLFDE MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMP25H18DLFDE
   Marking Code: H8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.8 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: U-DFN2020-6

 DMP25H18DLFDE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMP25H18DLFDE Datasheet (PDF)

 ..1. Size:247K  diodes
 dmp25h18dlfde.pdf

DMP25H18DLFDE DMP25H18DLFDE

DMP25H18DLFDE 250V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low-Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 14 @ VGS = -10V -0.26A -250V Low On-Resistance 18 @ VGS = -3.5V -0.23A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 9.1. Size:403K  diodes
 dmp2540ucb9.pdf

DMP25H18DLFDE DMP25H18DLFDE

DMP2540UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Q g Qgd ID RDS(on) = 33m to Minimize On-State Losses -25V 33m 4.8nC 1.0nC -5.2A Qg = 4.8nC for Ultra-Fast Switching Vgs(th) = -0.6V typ. for a Low Turn-On Potential CSP with Foot

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDP8447L

 

 
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