DMT5015LFDF Specs and Replacement
Type Designator: DMT5015LFDF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.82 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 9.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 301.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: U-DFN2020-6
DMT5015LFDF substitution
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DMT5015LFDF datasheet
dmt5015lfdf.pdf
DMT5015LFDF 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25 C 15m @ VGS = 10V 9.1A Low Gate Threshold Voltage 50V 23m @ VGS = 4.5V 7.4A Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H... See More ⇒
Detailed specifications: DMS3012SFG, DMS3014SFG, DMS3014SSS, DMS3015SSS, DMS3016SSS, DMS3017SSD, DMS3019SSD, DMT3008LFDF, IRF9540, DMT6008LFG, DMT6010LFG, DMT6016LFDF, DMT6016LPS, DMT6016LSS, DMT8012LFG, DMTH8012LK3, DN1509
Keywords - DMT5015LFDF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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