DN2530 Datasheet and Replacement
Type Designator: DN2530
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.175 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: TO-92 SOT-89
DN2530 substitution
DN2530 Datasheet (PDF)
dn2530.pdf

DN2530N-Channel Depletion-ModeVertical DMOS FETsFeatures General DescriptionThe DN2530 is a low threshold depletion-mode (normally-on) High input impedancetransistor utilizing an advanced vertical DMOS structure and Low input capacitanceSupertexs well-proven silicon-gate manufacturing process. Fast switching speedsThis combination produces a device with the po
dn2535.pdf

DN2535N-Channel Depletion-ModeVertical DMOS FETsFeatures General DescriptionThe Supertex DN2535 is a low threshold depletion mode High input impedance(normally-on) transistor utilizing an advanced vertical Low input capacitanceDMOS structure and Supertexs well-proven silicon-gate Fast switching speedsmanufacturing process. This combination produces a device
Datasheet: DMT6016LFDF , DMT6016LPS , DMT6016LSS , DMT8012LFG , DMTH8012LK3 , DN1509 , DN2450 , DN2470 , 2SK3568 , DN2535 , DN2540 , DN2625 , DN3135 , DN3145 , DN3525 , DN3535 , DN3545 .
History: AO4620 | NVD4806N | IXTA60N10T | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3
Keywords - DN2530 MOSFET datasheet
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History: AO4620 | NVD4806N | IXTA60N10T | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3



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