DN3535 Datasheet and Replacement
Type Designator: DN3535
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT-89
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DN3535 Datasheet (PDF)
dn3535.pdf

Supertex inc. DN3535N-Channel Depletion-ModeVertical DMOS FETsFeatures General Description High input impedance This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertexs Low input capacitancewell-proven silicon-gate manufacturing process. This Fast switching speedscombination produces a device with the po
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BSZ035N03LSG | SVF9N90F
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History: BSZ035N03LSG | SVF9N90F



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