DN3765 Datasheet and Replacement
Type Designator: DN3765
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO-252
DN3765 substitution
DN3765 Datasheet (PDF)
dn3765.pdf

DN3765N-Channel Depletion-ModeVertical DMOS FETFeatures General DescriptionThis depletion-mode (normally-on) transistor utilizes an High input impedanceadvanced vertical DMOS structure and Supertexs well- Low input capacitanceproven silicon-gate manufacturing process. This combination Fast switching speedsproduces a device with the power handling capabilities o
Datasheet: DN2535 , DN2540 , DN2625 , DN3135 , DN3145 , DN3525 , DN3535 , DN3545 , AON7506 , DSK3J02 , DSK5J01 , DSK5J01X0L , DSK9J01 , DSKTJ04 , DSKTJ05 , DSKTJ07 , DSKTJ08 .
History: DHE8004 | IRF7105Q | WMM80R1K5S | NCE40P06S | IPAN70R360P7S | 8N60KG-TF2-T | AFN1072
Keywords - DN3765 MOSFET datasheet
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History: DHE8004 | IRF7105Q | WMM80R1K5S | NCE40P06S | IPAN70R360P7S | 8N60KG-TF2-T | AFN1072



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