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DN3765 Specs and Replacement

Type Designator: DN3765

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-252

DN3765 substitution

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DN3765 datasheet

 ..1. Size:348K  supertex
 dn3765.pdf pdf_icon

DN3765

DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode (normally-on) transistor utilizes an High input impedance advanced vertical DMOS structure and Supertex s well- Low input capacitance proven silicon-gate manufacturing process. This combination Fast switching speeds produces a device with the power handling capabilities o... See More ⇒

Detailed specifications: DN2535, DN2540, DN2625, DN3135, DN3145, DN3525, DN3535, DN3545, IRFB3607, DSK3J02, DSK5J01, DSK5J01X0L, DSK9J01, DSKTJ04, DSKTJ05, DSKTJ07, DSKTJ08

Keywords - DN3765 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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