DSK5J01 Specs and Replacement
Type Designator: DSK5J01
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 400 Ohm
Package: SMINI3-F2-B
DSK5J01 substitution
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DSK5J01 datasheet
dsk5j01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DSK5J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor Features Package High gate-drain voltage (source open) VGDO Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 Source... See More ⇒
dsk5j01x0l.pdf
Doc No. TT4-EA-12789 Revision. 2 Product Standards Junction FETs DSK5J01 0L DSK5J01 0L Silicon N-channel Junciton FET Unit mm For low frequency amplificaton / For pyroelctric sensor 2.0 DSK2J01 in SMini3 type package 0.3 0.13 Features 3 High gate-drain Voltage(Source open)VGDO Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 12 ... See More ⇒
Detailed specifications: DN2625, DN3135, DN3145, DN3525, DN3535, DN3545, DN3765, DSK3J02, IRF530, DSK5J01X0L, DSK9J01, DSKTJ04, DSKTJ05, DSKTJ07, DSKTJ08, 2SK3591, 36N06
Keywords - DSK5J01 MOSFET specs
DSK5J01 cross reference
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