All MOSFET. DSK5J01 Datasheet

 

DSK5J01 Datasheet and Replacement


   Type Designator: DSK5J01
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 400 Ohm
   Package: SMINI3-F2-B
 

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DSK5J01 Datasheet (PDF)

 ..1. Size:434K  panasonic
 dsk5j01.pdf pdf_icon

DSK5J01

This product complies with the RoHS Directive (EU 2002/95/EC).DSK5J01Silicon N-channel Junction FETFor low frequency amplificationFor pyroelectric sensor Features Package High gate-drain voltage (source open) VGDO Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Source

 0.1. Size:473K  panasonic
 dsk5j01x0l.pdf pdf_icon

DSK5J01

Doc No. TT4-EA-12789Revision. 2Product StandardsJunction FETsDSK5J010LDSK5J010LSilicon N-channel Junciton FETUnit: mm For low frequency amplificaton / For pyroelctric sensor2.0DSK2J01 in SMini3 type package0.3 0.13 Features3 High gate-drain Voltage(Source open)VGDO Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12

Datasheet: DN2625 , DN3135 , DN3145 , DN3525 , DN3535 , DN3545 , DN3765 , DSK3J02 , AO4407 , DSK5J01X0L , DSK9J01 , DSKTJ04 , DSKTJ05 , DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 .

History: LN2312LT1G | AOLF66610 | TPCS8303 | FDP20N40 | NVJD5121N | DMN33D8L | HMS17N65F

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