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DSK9J01 Specs and Replacement

Type Designator: DSK9J01

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 400 Ohm

Package: SSMINI3-F3-B

DSK9J01 substitution

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DSK9J01 datasheet

 ..1. Size:430K  panasonic
 dsk9j01.pdf pdf_icon

DSK9J01

This product complies with the RoHS Directive (EU 2002/95/EC). DSK9J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor DSK5J01 in SSMini3 type package Features Package High gate-drain voltage (source open) VGDO Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free ... See More ⇒

Detailed specifications: DN3145, DN3525, DN3535, DN3545, DN3765, DSK3J02, DSK5J01, DSK5J01X0L, NCEP15T14, DSKTJ04, DSKTJ05, DSKTJ07, DSKTJ08, 2SK3591, 36N06, 65N06, FCP125N65S3

Keywords - DSK9J01 MOSFET specs

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