All MOSFET. DSK9J01 Datasheet

 

DSK9J01 Datasheet and Replacement


   Type Designator: DSK9J01
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 400 Ohm
   Package: SSMINI3-F3-B
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DSK9J01 Datasheet (PDF)

 ..1. Size:430K  panasonic
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DSK9J01

This product complies with the RoHS Directive (EU 2002/95/EC).DSK9J01Silicon N-channel Junction FETFor low frequency amplificationFor pyroelectric sensorDSK5J01 in SSMini3 type package Features Package High gate-drain voltage (source open) VGDO Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE40H11 | SL12N100T | FDD8750 | SSF10N60

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