DSK9J01 MOSFET. Datasheet pdf. Equivalent
Type Designator: DSK9J01
Marking Code: B6P_B6Q
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.13 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 400 Ohm
Package: SSMINI3-F3-B
DSK9J01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DSK9J01 Datasheet (PDF)
dsk9j01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSK9J01Silicon N-channel Junction FETFor low frequency amplificationFor pyroelectric sensorDSK5J01 in SSMini3 type package Features Package High gate-drain voltage (source open) VGDO Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100