All MOSFET. DSK9J01 Datasheet

 

DSK9J01 Datasheet and Replacement


   Type Designator: DSK9J01
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 400 Ohm
   Package: SSMINI3-F3-B
 

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DSK9J01 Datasheet (PDF)

 ..1. Size:430K  panasonic
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DSK9J01

This product complies with the RoHS Directive (EU 2002/95/EC).DSK9J01Silicon N-channel Junction FETFor low frequency amplificationFor pyroelectric sensorDSK5J01 in SSMini3 type package Features Package High gate-drain voltage (source open) VGDO Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free

Datasheet: DN3145 , DN3525 , DN3535 , DN3545 , DN3765 , DSK3J02 , DSK5J01 , DSK5J01X0L , NCEP15T14 , DSKTJ04 , DSKTJ05 , DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , FCP125N65S3 .

History: AOI442 | IPB80N04S2L-03

Keywords - DSK9J01 MOSFET datasheet

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