All MOSFET. DSK9J01 Datasheet

 

DSK9J01 Datasheet and Replacement


   Type Designator: DSK9J01
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 400 Ohm
   Package: SSMINI3-F3-B
 

 DSK9J01 substitution

   - MOSFET ⓘ Cross-Reference Search

 

DSK9J01 Datasheet (PDF)

 ..1. Size:430K  panasonic
 dsk9j01.pdf pdf_icon

DSK9J01

This product complies with the RoHS Directive (EU 2002/95/EC).DSK9J01Silicon N-channel Junction FETFor low frequency amplificationFor pyroelectric sensorDSK5J01 in SSMini3 type package Features Package High gate-drain voltage (source open) VGDO Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-free

Datasheet: DN3145 , DN3525 , DN3535 , DN3545 , DN3765 , DSK3J02 , DSK5J01 , DSK5J01X0L , IRFP450 , DSKTJ04 , DSKTJ05 , DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , FCP125N65S3 .

History: HM3306 | S68N08RP | D10N70 | BUK9K18-40E | YJG90G10A | STN3414 | CS6N70F

Keywords - DSK9J01 MOSFET datasheet

 DSK9J01 cross reference
 DSK9J01 equivalent finder
 DSK9J01 lookup
 DSK9J01 substitution
 DSK9J01 replacement

 

 
Back to Top

 


 
.