FMH08N80E PDF and Equivalents Search

 

FMH08N80E Specs and Replacement


   Type Designator: FMH08N80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO-3PN
 

 FMH08N80E substitution

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FMH08N80E datasheet

 ..1. Size:232K  inchange semiconductor
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FMH08N80E

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Detailed specifications: DSKTJ05 , DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , FCP125N65S3 , FKI10300 , 2SK3568 , FQU10N20 , IPA180N10N3 , IPA60R120P7 , IPB048N15N5LF , IPD031N06L3 , IPD033N06N , IPD034N06N3 , IPD036N04L .

History: 2SJ601-Z | SFF250C | STN4480 | PJS6800 | KMA4D5P20XA | IPP45P03P4L-11 | AGM1030MA

Keywords - FMH08N80E MOSFET specs

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