All MOSFET. FMH08N80E Datasheet

 

FMH08N80E Datasheet and Replacement


   Type Designator: FMH08N80E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO-3PN
 

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FMH08N80E Datasheet (PDF)

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FMH08N80E

isc N-Channel MOSFET Transistor FMH08N80EFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.45(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS generally applied in high efficiency switch modepower supplies.

Datasheet: DSKTJ05 , DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , FCP125N65S3 , FKI10300 , AO3401 , FQU10N20 , IPA180N10N3 , IPA60R120P7 , IPB048N15N5LF , IPD031N06L3 , IPD033N06N , IPD034N06N3 , IPD036N04L .

History: STB80NF03L-04T4 | 2N5654 | HYG045N03LA1C2 | SML1004RKN | HY4903P | SVS65R400FJDE3 | 2P7154AC

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