FMH08N80E MOSFET. Datasheet pdf. Equivalent
Type Designator: FMH08N80E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO-3PN
FMH08N80E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FMH08N80E Datasheet (PDF)
..1. Size:232K inchange semiconductor
fmh08n80e.pdf
fmh08n80e.pdf
isc N-Channel MOSFET Transistor FMH08N80EFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.45(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS generally applied in high efficiency switch modepower supplies.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FCA20N60F109
