All MOSFET. IPA180N10N3 Datasheet

 

IPA180N10N3 Datasheet and Replacement


   Type Designator: IPA180N10N3
   Marking Code: 180N10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220F
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IPA180N10N3 Datasheet (PDF)

 ..1. Size:244K  inchange semiconductor
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IPA180N10N3

isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3FEATURESLow drain-source on-resistance:RDS(on) 18m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 0.1. Size:333K  infineon
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IPA180N10N3

IPA180N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 18 mW Excellent gate charge x R product (FOM)DS(on)ID 28 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freque

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