IPA180N10N3 PDF and Equivalents Search

 

IPA180N10N3 Specs and Replacement

Type Designator: IPA180N10N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 237 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-220F

IPA180N10N3 substitution

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IPA180N10N3 datasheet

 ..1. Size:244K  inchange semiconductor
 ipa180n10n3.pdf pdf_icon

IPA180N10N3

isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3 FEATURES Low drain-source on-resistance RDS(on) 18m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

 0.1. Size:333K  infineon
 ipa180n10n3g.pdf pdf_icon

IPA180N10N3

IPA180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 18 mW Excellent gate charge x R product (FOM) DS(on) ID 28 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freque... See More ⇒

Detailed specifications: DSKTJ08, 2SK3591, 36N06, 65N06, FCP125N65S3, FKI10300, FMH08N80E, FQU10N20, 5N60, IPA60R120P7, IPB048N15N5LF, IPD031N06L3, IPD033N06N, IPD034N06N3, IPD036N04L, IPD038N06N3, IPD046N08N5

Keywords - IPA180N10N3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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