IPD320N20N3 Datasheet. Specs and Replacement
Type Designator: IPD320N20N3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-252
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IPD320N20N3 substitution
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IPD320N20N3 datasheet
ipd320n20n3.pdf
isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200... See More ⇒
ipd320n20n3g.pdf
IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max 32 mW Excellent gate charge x R product (FOM) DS(on) ID 34 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to ... See More ⇒
Detailed specifications: IPD122N10N3, IPD127N06L, IPD135N08N3, IPD16CN10N, IPD180N10N3, IPD200N15N3, IPD220N06L3, IPD25CN10N, AO4407, IPD33CN10N, IPD350N06L, IPD400N06N, IPD530N15N3, IPD600N25N3, IPD60R170CFD7, IPD60R180C7, IPD60R180P7S
Keywords - IPD320N20N3 MOSFET specs
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MOSFET Parameters. How They Affect Each Other
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