IPD320N20N3 MOSFET Datasheet: N-Ch, 200V, 34A. Full specification with pinout and replacement list

IPD320N20N3 Specs and Replacement

   Type Designator: IPD320N20N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-252

IPD320N20N3 substitution

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IPD320N20N3 datasheet

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isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200... See More ⇒

0.1. Size:508K infineon
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IPD320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max 32 mW Excellent gate charge x R product (FOM) DS(on) ID 34 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to ... See More ⇒

Detailed specifications: IPD122N10N3 , IPD127N06L , IPD135N08N3 , IPD16CN10N , IPD180N10N3 , IPD200N15N3 , IPD220N06L3 , IPD25CN10N , EMB04N03H , IPD33CN10N , IPD350N06L , IPD400N06N , IPD530N15N3 , IPD600N25N3 , IPD60R170CFD7 , IPD60R180C7 , IPD60R180P7S .