P50NF06 MOSFET. Datasheet pdf. Equivalent
Type Designator: P50NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: TO-220F
P50NF06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P50NF06 Datasheet (PDF)
1.1. p50nf06.pdf 
Size:227K _inchange_semiconductor
isc N-Channel MOSFET Transistor P50NF06 DESCRIPTION ·Drain Current I =50A@ T =25℃ D C ·Drain Source Voltage- : V =60V(Min) DSS ·Static Drain-Source On-Resistance : R = 28mΩ(Max) DS(on) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switc
5.1. stb50nf25 stp50nf25.pdf Size:345K _st
STB50NF25 STP50NF25 N-channel 250V - 0.055? - 45A - D2PAK - TO-220 low gate charge STripFET Power MOSFET Features RDS(on) Type VDSS ID PW Max STP50NF25 250 V <0.069 ? 45 A 160 W STB50NF25 250 V <0.069 ? 45 A 160 W 3 3 100% avalanche tested 1 2 1 Gate charge minimized TO-220 D?PAK Low intrinsic capacitances Application Switching applications Figure 1. Internal schemati
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
