2N4446 Specs and Replacement

Type Designator: 2N4446

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: TO-46

2N4446 substitution

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2N4446 datasheet

 ..1. Size:64K  njs
 2n4445 2n4446 2n4447 2n4448.pdf pdf_icon

2N4446

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2N4446

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 9.2. Size:66K  microsemi
 2n4449 2n2369a.pdf pdf_icon

2N4446

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO ... See More ⇒

 9.3. Size:53K  microsemi
 2n4449ub.pdf pdf_icon

2N4446

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO ... See More ⇒

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Detailed specifications: 2N4416AC1A, 2N4416AC1B, 2N4416AC1C, 2N4416AC1D, 2N4416ACSM, 2N4416CSM, 2N4416DCSM, 2N4445, IRF640N, 2N4447, 2N4448, 2N5114E3, 2N5114UB, 2N5114UBE3, 2N5115E3, 2N5115UB, 2N5115UBE3

Keywords - 2N4446 MOSFET specs

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