2N4446 Datasheet and Replacement
Type Designator: 2N4446
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Cossⓘ - Output Capacitance: 18 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: TO-46
2N4446 substitution
2N4446 Datasheet (PDF)
2n4449 2n2369a.pdf
TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO
2n4449ub.pdf
TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO
Datasheet: 2N4416AC1A , 2N4416AC1B , 2N4416AC1C , 2N4416AC1D , 2N4416ACSM , 2N4416CSM , 2N4416DCSM , 2N4445 , IRF640N , 2N4447 , 2N4448 , 2N5114E3 , 2N5114UB , 2N5114UBE3 , 2N5115E3 , 2N5115UB , 2N5115UBE3 .
History: IRF4104L | IRF4905SPBF
Keywords - 2N4446 MOSFET datasheet
2N4446 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRF4104L | IRF4905SPBF
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