2N5163 Specs and Replacement

Type Designator: 2N5163

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 0.04 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm

Package: TO-106

2N5163 substitution

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2N5163 datasheet

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2N5163

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Detailed specifications: 2N5114UB, 2N5114UBE3, 2N5115E3, 2N5115UB, 2N5115UBE3, 2N5116E3, 2N5116UB, 2N5116UBE3, IRFP250N, 2N6849HP, 2N6849U, 2N6896, 2N6898, 2N7000CSM, 2N7000G, 2N7000RLRA, 2N7000RLRAG

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