2N6898 Specs and Replacement

Type Designator: 2N6898

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-204AE

2N6898 substitution

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2N6898 datasheet

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2N6898

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 2n6896.pdf pdf_icon

2N6898

2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power Features MOSFET -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate rDS(ON) = 0.600 power MOS field effect transistor designed for high-speed SOA is Power Dissipation Limited applications such as switching regulators, switching converters, relay drivers, and drivers for high power b... See More ⇒

Detailed specifications: 2N5115UBE3, 2N5116E3, 2N5116UB, 2N5116UBE3, 2N5163, 2N6849HP, 2N6849U, 2N6896, 2SK3878, 2N7000CSM, 2N7000G, 2N7000RLRA, 2N7000RLRAG, 2N7000RLRMG, 2N7000RLRPG, 2N7002-7, 2N7002-7-F

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