2N7090 Specs and Replacement

Type Designator: 2N7090

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-257AB

2N7090 substitution

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2N7090 datasheet

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2N7090

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 9.2. Size:34K  semelab
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2N7090

2N7091 MECHANICAL DATA Dimensions in mm(inches) P CHANNEL ENHANCEMENT MODE 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) TRANSISTOR 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) V(BR)DSS -100V 1 2 3 ID(A) -14A RDS(on) 0.20 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120) BSC BSC FEATURES TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APP... See More ⇒

 9.3. Size:242K  siliconix
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Detailed specifications: 2N7002TESGP, 2N7002TGP, 2N7002VGP, 2N7002WSK, 2N7002W-TP, 2N7002X, 2N7081-220M-ISO, 2N7089, IRF520, 2N7092, 2N7218U, 2N7219U, 2N7221U, 2N7222, 2N7222U, 2N7224U, 2N7225U

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