2N7335E3 Specs and Replacement
Type Designator: 2N7335E3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: MO-036AB
2N7335E3 substitution
2N7335E3 datasheet
2n7335 2n7335e3.pdf
2N7335 Qualified Levels JAN, JANTX, and QUAD P-CHANNEL MOSFET Available on JANTXV commercial Qualified per MIL-PRF-19500/599 versions DESCRIPTION This 2N7335 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important For th... See More ⇒
2n7334 irfg110.pdf
PD-90396H IRFG110 JANTX2N7334 JANTXV2N7334 POWER MOSFET REF MIL-PRF-19500/597 THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 1.0A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res... See More ⇒
Detailed specifications: 2N7278 , 2N7281 , 2N7291 , 2N7293 , 2N7295 , 2N7297 , 2N7334 , 2N7335 , IRFZ44N , 2N7380 , 2N7381 , 2N7394 , 2N7394U , 2N7405 , BSC079N03S , FHF5N60 , MDD1654 .
Keywords - 2N7335E3 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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