All MOSFET. 2N7335E3 Datasheet

 

2N7335E3 Datasheet and Replacement


   Type Designator: 2N7335E3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: MO-036AB
 

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2N7335E3 Datasheet (PDF)

 ..1. Size:596K  microsemi
 2n7335 2n7335e3.pdf pdf_icon

2N7335E3

2N7335 Qualified Levels: JAN, JANTX, and QUAD P-CHANNEL MOSFET Available on JANTXV commercial Qualified per MIL-PRF-19500/599 versions DESCRIPTION This 2N7335 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For th

 9.1. Size:267K  international rectifier
 2n7334 irfg110.pdf pdf_icon

2N7335E3

PD-90396HIRFG110JANTX2N7334JANTXV2N7334POWER MOSFETREF:MIL-PRF-19500/597THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNELHEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFG110 0.7 1.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-stateres

Datasheet: 2N7278 , 2N7281 , 2N7291 , 2N7293 , 2N7295 , 2N7297 , 2N7334 , 2N7335 , IRFZ44N , 2N7380 , 2N7381 , 2N7394 , 2N7394U , 2N7405 , BSC079N03S , FHF5N60 , MDD1654 .

History: 4N90G-T3N-T | ME2306AN-G | SIF2N60C | STP130N6F7 | PSA10N65C | SUD08P06-155 | IRL7486MTRPBF

Keywords - 2N7335E3 MOSFET datasheet

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