All MOSFET. MDD1654 Datasheet

 

MDD1654 Datasheet and Replacement


   Type Designator: MDD1654
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.8 nS
   Cossⓘ - Output Capacitance: 278 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO252
 

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MDD1654 Datasheet (PDF)

 ..1. Size:1121K  magnachip
 mdd1654.pdf pdf_icon

MDD1654

MDD1654 30V N-channel Trench MOSFET : 30V, 55A, 6.0m General Description Features The MDD1654 uses advanced Magnachips VDS = 30V ID = 55A @VGS = 10V MOSFET Technology, which provides high performance in on-state resistance, fast switching RDS(ON) performance and excellent quality. MDD1654 is

 8.1. Size:845K  cn vbsemi
 mdd1653rh.pdf pdf_icon

MDD1654

MDD1653RHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

Datasheet: 2N7335E3 , 2N7380 , 2N7381 , 2N7394 , 2N7394U , 2N7405 , BSC079N03S , FHF5N60 , IRF640 , NDP05N50Z , NDS356P , P6503NJ , RU6888R , SVS5N70D , SVS5N70MJ , SVS5N70MN , SVS5N70F .

History: SSG4228 | CS3410B4 | IRFH5300TRPBF | NVMFD024N06CT1G | SSFT3904U | HYG015N04LS1C2 | SI4558DY

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