11P50A Specs and Replacement
Type Designator: 11P50A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: LCC
11P50A substitution
- MOSFET ⓘ Cross-Reference Search
11P50A datasheet
11p50a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode 11 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 750 m Hermetically sealed, surface mount power package ... See More ⇒
msafx11p50a.pdf
2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode 11 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 750 m Hermetically sealed, surface mount power package ... See More ⇒
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf
VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode IXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche Rated IXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C 10P50 -10 A 11P50 -... See More ⇒
ixth11p50 ixtt11p50.pdf
VDSS = -500 V Standard Power MOSFET ID25 = -11 A P-Channel Enhancement Mode IXTH 11P50 Avalanche Rated RDS(on) = 0.75 IXTT 11P50 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C -11 A IDM TC = 25 C, p... See More ⇒
Detailed specifications: 10N60A, 10N60AF, 10N60H, 10N80AF, 10N80B, 10N90A, 11N10, 11N10G, IRF520, 12N50A, 12N60A, 12N60AF, 13N110A, 13N60A, 13N60AF, 16N60A, 16N60AF
Keywords - 11P50A MOSFET specs
11P50A cross reference
11P50A equivalent finder
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AGM404A
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