11P50A PDF and Equivalents Search

 

11P50A Specs and Replacement

Type Designator: 11P50A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: LCC

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11P50A datasheet

 ..1. Size:34K  microsemi
11p50a.pdf pdf_icon

11P50A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode 11 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 750 m Hermetically sealed, surface mount power package ... See More ⇒

 0.1. Size:44K  microsemi
msafx11p50a.pdf pdf_icon

11P50A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode 11 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 750 m Hermetically sealed, surface mount power package ... See More ⇒

 9.1. Size:124K  ixys
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf pdf_icon

11P50A

VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode IXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche Rated IXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C 10P50 -10 A 11P50 -... See More ⇒

 9.2. Size:573K  ixys
ixth11p50 ixtt11p50.pdf pdf_icon

11P50A

VDSS = -500 V Standard Power MOSFET ID25 = -11 A P-Channel Enhancement Mode IXTH 11P50 Avalanche Rated RDS(on) = 0.75 IXTT 11P50 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C -11 A IDM TC = 25 C, p... See More ⇒

Detailed specifications: 10N60A, 10N60AF, 10N60H, 10N80AF, 10N80B, 10N90A, 11N10, 11N10G, IRF520, 12N50A, 12N60A, 12N60AF, 13N110A, 13N60A, 13N60AF, 16N60A, 16N60AF

Keywords - 11P50A MOSFET specs

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